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Cree

Cree

又名:科锐
分类: 半导体照明
属性: 企业
最后修改时间: 2013年05月25日
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目录
Cree 公司是市场上领先的革新者与半导体的制造商,以显著地提高固态照明,电力及通讯产品的能源效果来提高它们的价值。

Cree

Cree 公司是市场上领先的革新者与半导体的制造商,以显著地提高固态照明,电力及通讯产品的能源效果来提高它们的价值。

Cree 的市场优势关键来源于我们在有氮化镓(GaN) 的碳化硅 (SiC) 方面上独一的材料专长知识,来制造芯片及成套的器件。这些芯片及成套的器件可在很小的空间里用更大的功率,同时比别的现有技术,材料及产品放热更少。

Cree 把能源回归解决方案 (ROE™) 用于多种用途,包括在更亮及可调节的发光二极管光一般照明,更鲜艳的背光显示,高电流开关电源和变转速电动机的最佳电力管理,和更为有效的数据与声音通讯的无线基础设施等方面有令人兴奋的可选择的方案 。 Cree 的顾客有从创新照明灯具制造商到与国防有关的联邦机构。

Cree 的产品系列包括蓝的和绿的发光二极管芯片,照明发光二极管,背光发光二极管,为功率开关器件,无线电频率设备和无线电设备的发光二极管。 

Cree 历程

Major Business and Product Milestones

1980s
July 1987 Cree founded
August 1989 Introduced first blue LED
1990s
October 1991 Released world’s first commercial SiC wafers
February 1993 Initial public offering
August 1993 Introduced 4H SiC wafer
September 1993 Introduced brighter version blue LED
October 1993 Developed SiC microwave transistors operating up to 12.9 GHz
June 1995 Introduced Nitride-based blue LED
May 1997 Announced reduced micropipe 4 HN SiC wafers
June 1997 Demonstrated pulsed GaN blue laser at room temperature
September 1997 Introduced 2-inch SiC wafer
March 1998 Demonstrated high-power microwave SiC MESFET
May 1999 Introduced InGaN blue and green LEDs
June 1999 Introduced 48 V, 10 W SiC MESFET RF device
October 1999 Demonstrated 4-inch SiC wafer
2000
May Demonstrated 12.3 kV high-efficiency SiC power rectifier
June Introduced lower-current InGaN blue and green LEDs
August Announced high-power 10 GHz GaN HEMT
October Introduced UltraBright® blue and green LEDs
2001
February Demonstrated 32-percent quantum efficiency with near-UV LED
April Introduced 3-inch 4H SiC wafers
May Introduced MegaBright® blue LED
July Introduced 4H and 6H 3-inch SiC wafers
July Introduced first SiC Schottky diodes
July Introduced 12 mW UV LEDs
October Introduced XBright® blue LED
November Introduced green 505 MegaBright LED
November Announced blue laser lifetimes in excess of 1,000 hours
December Demonstrated 108 W at 2 GHz from GaN RF devices
2002
January Introduced 10-A, 600-V, SiC Schottky rectifier
January Introduced green 525 MegaBright LED
February Introduced XBright power chip
August Introduced 20-A, 600-V, Zero Recovery® SiC rectifier
2003
February Released 1200 V SiC Schottky rectifier
March Introduced second-generation SiC MESFET RF transistor
June Introduced MegaBright Plus™ and XBright Plus™ blue LEDs
June Introduced LDMOS products for avionics and radar markets
June Demonstrated 100 mm semi-insulating SiC substrates
July Introduced RazerThin® LED products
2004
January Expanded XThin® LED product family
May Launched brighter XThin LED product
July Launched XLamp® LED product line
November Announced XLamp 7090
2005
February Achieved standard LED efficiency of 100 lumens/watt in R&D
February Achieved 56 lumens from one-watt white XLamp LED in R&D
May Introduced brighter blue and green XB900™ power LEDs for LCD BL
May Introduced Colorwave™ backlight solution for LCD TVs & monitors
June Introduced MegaBright 290 Gen 2 LED Product
June Introduced RazerThin 230 LED product
June Introduced SiC MESFETS for WiMAX power amplifiers
July Introduced 3-watt XLamp
September Achieved 70 lumens per watt with XLamp 7090 LED in R&D
September Introduced 100mm (4”) SiC substrate and epitaxy material
2006
January Demonstrated a 100-kVA SiC Three Phase Inverter
February Introduced the XR series of XLamp LEDs
March Introduced the EZBright™ family of LED chips
April Introduced the EZR™ LED chip for the EZBright family
May Introduced GaN HEMT for WiMAX power transistors
June Demonstrated a 131-lumens/watt white LED
June Demonstrated 400 watts of RF power for GaN S-Band transistors
July Introduced 2-amp rectifier for PC power supplies
August Introduced EZBright1000™ LED power chip for general lighting applications
October Delivered the XLamp XR-E Series LED, the first 160-lumen white power LED
2007
February Introduced the XLamp XR-C series of LEDs
February Introduced the EZBright700 LED power chip
March Expanded the XLamp XR-E and XR-C series of LEDs with warm white color temperatures
April Acquired COTCO Luminant Device Ltd. of Hong Kong
May Demonstrated 100-mm, Zero Micropipe SiC substrates
June Introduced GaN HEMT for broadband applications
June Introduced blue XLamp XR-E LEDs
June Announced commercial availability of XLamp LEDs with minimum luminous flux of 100 lumens at 350 mA
September Achieved 1,000 lumens from a single LED
October Introduced 8-A, 600-V, Zero Recovery SiC rectifier for computer servers
October Announced commercial release of 100-mm, Zero Micropipe SiC substrates
 

  • Cree资讯
  • 因存过热危险 Cree宣布召回18.9万只LED灯管
  • 2016年8月25日,Cree公司正式宣布召回北美市场189,000只LED T8灯管,产品编码为“BT848系列灯”。此次被召回的灯具可能会过热并熔化,有烫伤的危险。这些灯具主要用于室内照明,以取代传统的两针T8荧光灯管。
  • Cree公布2016财年第四季度和全年的财务业绩
  • Cree公布截至2016年6月26日,公司2016财年第四季度收入为3.88亿美元。与2015财年第四季度3.82亿美元的收入相比,增长2%。2016财年总收入为16.2亿美元,与2015财年16.3亿美元的总收入相比,下降1%。
  • 337-TA-947调查案初步裁定出炉 Cree获ITC支持
  • 科锐公司2日宣布,该公司已经收到了美国ITC337-TA-947调查案的初步裁定通知,此次裁定支持科锐对费特电气公司和其亚洲供应商东贝光电科技有限公司有关侵犯专利和发布虚假广告的控诉。
  • 为何Cree将旗下Wolfspeed出售给英飞凌?
  • 7月14日,英飞凌宣布以8.5亿美元现金收购CREE旗下动力和射频部门Wolfspeed。而就在去年9月份Wolfspeed还宣称要公开募股上市,为何不足一年时间转变如此之大?如今CREE官方给出了说法。
  • 英飞凌拿下Cree旗下wolfspeed资产 成SiC半导体霸主
  • 北京时间7月14日晚间消息,德国芯片制造商英飞凌科技公司(Infineon Technologies AG)在本周四宣布,公司已经同意以8.5亿美元的现金总价,收购总部位于美国北卡罗莱纳州的Cree公司旗下wolfspeed资产。
  • 赢创和SCREEN FT将于2017年前提供金属氧化物的生产方案
  • 在旧金山举办的2016年显示周(Display Week)交易会期间,德国特种化工公司赢创工业集团与日本平板显示器生产设备制造商株式会社迪恩士先端科技( SCREEN FT )联合展出了其战略合作的首批成果,并对未来的前景进行了展望。
  • 反击战!Cree控告Feit Electric侵犯LED专利
  • 美国LED大厂CREE日前在美国北卡罗莱纳州中区联邦地院(U.S.District Court for the Middle District of North Carolina)控告Feit Electric公司侵犯Cree的LED相关专利技术,主要侵权的专利是与LED灯泡相关。
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