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Cree

Cree

又名:科锐
分类: 半导体照明
属性: 企业
最后修改时间: 2013年05月25日
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Cree 公司是市场上领先的革新者与半导体的制造商,以显著地提高固态照明,电力及通讯产品的能源效果来提高它们的价值。

Cree

Cree 公司是市场上领先的革新者与半导体的制造商,以显著地提高固态照明,电力及通讯产品的能源效果来提高它们的价值。

Cree 的市场优势关键来源于我们在有氮化镓(GaN) 的碳化硅 (SiC) 方面上独一的材料专长知识,来制造芯片及成套的器件。这些芯片及成套的器件可在很小的空间里用更大的功率,同时比别的现有技术,材料及产品放热更少。

Cree 把能源回归解决方案 (ROE™) 用于多种用途,包括在更亮及可调节的发光二极管光一般照明,更鲜艳的背光显示,高电流开关电源和变转速电动机的最佳电力管理,和更为有效的数据与声音通讯的无线基础设施等方面有令人兴奋的可选择的方案 。 Cree 的顾客有从创新照明灯具制造商到与国防有关的联邦机构。

Cree 的产品系列包括蓝的和绿的发光二极管芯片,照明发光二极管,背光发光二极管,为功率开关器件,无线电频率设备和无线电设备的发光二极管。 

Cree 历程

Major Business and Product Milestones

1980s
July 1987 Cree founded
August 1989 Introduced first blue LED
1990s
October 1991 Released world’s first commercial SiC wafers
February 1993 Initial public offering
August 1993 Introduced 4H SiC wafer
September 1993 Introduced brighter version blue LED
October 1993 Developed SiC microwave transistors operating up to 12.9 GHz
June 1995 Introduced Nitride-based blue LED
May 1997 Announced reduced micropipe 4 HN SiC wafers
June 1997 Demonstrated pulsed GaN blue laser at room temperature
September 1997 Introduced 2-inch SiC wafer
March 1998 Demonstrated high-power microwave SiC MESFET
May 1999 Introduced InGaN blue and green LEDs
June 1999 Introduced 48 V, 10 W SiC MESFET RF device
October 1999 Demonstrated 4-inch SiC wafer
2000
May Demonstrated 12.3 kV high-efficiency SiC power rectifier
June Introduced lower-current InGaN blue and green LEDs
August Announced high-power 10 GHz GaN HEMT
October Introduced UltraBright® blue and green LEDs
2001
February Demonstrated 32-percent quantum efficiency with near-UV LED
April Introduced 3-inch 4H SiC wafers
May Introduced MegaBright® blue LED
July Introduced 4H and 6H 3-inch SiC wafers
July Introduced first SiC Schottky diodes
July Introduced 12 mW UV LEDs
October Introduced XBright® blue LED
November Introduced green 505 MegaBright LED
November Announced blue laser lifetimes in excess of 1,000 hours
December Demonstrated 108 W at 2 GHz from GaN RF devices
2002
January Introduced 10-A, 600-V, SiC Schottky rectifier
January Introduced green 525 MegaBright LED
February Introduced XBright power chip
August Introduced 20-A, 600-V, Zero Recovery® SiC rectifier
2003
February Released 1200 V SiC Schottky rectifier
March Introduced second-generation SiC MESFET RF transistor
June Introduced MegaBright Plus™ and XBright Plus™ blue LEDs
June Introduced LDMOS products for avionics and radar markets
June Demonstrated 100 mm semi-insulating SiC substrates
July Introduced RazerThin® LED products
2004
January Expanded XThin® LED product family
May Launched brighter XThin LED product
July Launched XLamp® LED product line
November Announced XLamp 7090
2005
February Achieved standard LED efficiency of 100 lumens/watt in R&D
February Achieved 56 lumens from one-watt white XLamp LED in R&D
May Introduced brighter blue and green XB900™ power LEDs for LCD BL
May Introduced Colorwave™ backlight solution for LCD TVs & monitors
June Introduced MegaBright 290 Gen 2 LED Product
June Introduced RazerThin 230 LED product
June Introduced SiC MESFETS for WiMAX power amplifiers
July Introduced 3-watt XLamp
September Achieved 70 lumens per watt with XLamp 7090 LED in R&D
September Introduced 100mm (4”) SiC substrate and epitaxy material
2006
January Demonstrated a 100-kVA SiC Three Phase Inverter
February Introduced the XR series of XLamp LEDs
March Introduced the EZBright™ family of LED chips
April Introduced the EZR™ LED chip for the EZBright family
May Introduced GaN HEMT for WiMAX power transistors
June Demonstrated a 131-lumens/watt white LED
June Demonstrated 400 watts of RF power for GaN S-Band transistors
July Introduced 2-amp rectifier for PC power supplies
August Introduced EZBright1000™ LED power chip for general lighting applications
October Delivered the XLamp XR-E Series LED, the first 160-lumen white power LED
2007
February Introduced the XLamp XR-C series of LEDs
February Introduced the EZBright700 LED power chip
March Expanded the XLamp XR-E and XR-C series of LEDs with warm white color temperatures
April Acquired COTCO Luminant Device Ltd. of Hong Kong
May Demonstrated 100-mm, Zero Micropipe SiC substrates
June Introduced GaN HEMT for broadband applications
June Introduced blue XLamp XR-E LEDs
June Announced commercial availability of XLamp LEDs with minimum luminous flux of 100 lumens at 350 mA
September Achieved 1,000 lumens from a single LED
October Introduced 8-A, 600-V, Zero Recovery SiC rectifier for computer servers
October Announced commercial release of 100-mm, Zero Micropipe SiC substrates
 

  • Cree资讯
  • 英飞凌收购Cree Wolfspeed功率与射频部门遇阻
  • 发光二极管(LED)上游晶粒制造大厂科锐于美国股市8日盘后宣布,近期在与美国外资投资委员会(CFIUS)沟通过后,Cree与英飞凌(Infineon Technologies AG)均认为Wolfspeed功率与射频部门出售案不太可能以现有架构获得批准。
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